Abstract
A simple process to improve the quality factor of metal–insulator–silicon (MIS) capacitors is introduced. Typically, MIS capacitors show a low quality factor in the gigahertz range because the lower electrode is silicon, which has low conductivity. The electrical conductivity of the lower electrode of the MIS capacitor is improved by the application of side metal coating through a simple process. To make the side metal of the MIS capacitor, a 200 µm-deep trench is formed between each capacitor using a sawing machine, and then the top electrode and side metal coating are added at the same time. Since scribing is performed prior to realisation of the top electrode, no additional dicing process is required. The quality factor of the proposed capacitor is improved from 73.8 to 101.3 at 2 GHz just by the addition of the side metal electrode.
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