Abstract
A method to improve quality factor (Q) value of inductor is presented in this paper. A negative impedance circuit (NIC) is employed to reduce parasitic resistances and parasitic capacitances of oxide layer and silicon substrate. Simulation results show that the inductor with NIC can improve Q up to 23.1% compared to the inductor without NIC. In frequency range from 2GHz to 6GHz, Q is improved significantly. Moreover, unconsidered reduction in self-resonant frequency of the inductor is also observed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
