Quality factor boosting of bulk acoustic wave resonators based on a two dimensional array of high-Q resonant tanks

Abstract

An innovative resonance excitation methodology of a two-dimensional array of uniformly patterned structure into extremely high-quality factor (Q) mode using engineered frequency-matched thin piezoelectric film on substrate (TPoS) transducer is demonstrated in this Letter. The passive Q-enhancement can be attained lithographically without adding to the power requirement of the system. A 500 nm thick piezoelectric material facilitates the inter-electrical-mechanical domain coupling, and the displacement generated at the transducer periphery drives the patterned 10 μm thick single crystal silicon plate into various resonant modes. Using this topology, unexplored modes can be generated as well by the forced vibration feature of the interacting resonant tanks. Utilizing a multiport port excitation scheme, multiple modes are explored, while the primary focus is maintained on the Lamé mode of the array. In vacuum for an operational frequency of 58.56 MHz, an exceptionally high-quality factor of 58 276 is attained with a motional resistance of 1250 Ω and this is the record-high figure of merit (f × Q = 3.4 × 1012) attained for aluminum nitride-based TPoS based resonators. This successful demonstration of the energy coupling scheme paves a path for the study of existing and investigation of unexplored high-Q modes spanning over a wide range of frequency, making these devices a potential candidate for radio frequency front-end applications. The CMOS compatibility of aluminum nitride makes it an attractive solution for achieving low phase noise monolithically integrated CMOS–microelectromechanical systems oscillators.