Abstract
The absorption coefficient at 1.4 eV is divided by the value at 0.9 eV to obtain the factor used to judge the quality of μc-Si:H. PV device performance can be predicted by multiplyingVocwithIscwhen using this layer as an intrinsic layer. The results show a good relationship between the quality factor and the product of open-circuit voltage and short-circuit current. However, the final efficiency is influenced by the identities of the interface in the multilayer structure.
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