Abstract

ABSTRACT A method for quality assessment of layer- structured semiconductor si ngle crystals (InSe, GaSe, GaS) grown in evacuatedampoules by the Bridgman technique is proposed. For this purpose, nuclear quadrupole resonance method with aconsecutive scanning of the entire sample volume and evaluation of crystal perfection by the resulting spectra is used.Effective interaction between high-frequency field and crystal and, accordingly, restriction of scanning area of sample under study is provided with the use of a two-way saddle-shaped coil for a nuclear quadrupole resonance spectromete r.Keyw ords: Layer-structured semiconductor, nuclear quadrupole resonance, saddle-shaped coil 1. INTRODUCTION The specific feature of InSe and GaSe semiconductor compounds is strong anisotropy of chemical bond which results, in fact, in crystal two-dimensionality with the ensuing physical properties [1]. Undoped monoselenides are distinguished by low concentration of carriers (” 10 13 ÷ 10 14 km -3 ) and relatively lowm obility (for InSe up to ~ 2·10

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.