Qualitative assessment of epitaxial graphene FETs on SiC substrates via pulsed measurements and temperature variation

Abstract

In this paper, we report a qualitative study on the performances of Graphene on SiC FETs from pulsed measurements as a function of temperature variation, reflecting on the process quality of the graphene FETs. Currents and transconductances in both pulsed and DC measurements as a function of temperature in the 25°C to 75°C range do not show any significant variation which indicates a trap-free interface and good graphene quality as well as thermal stability. In order to get a complete picture, scattering parameters from pulsed measurements are also given and the extracted gate capacitances and resistances, cut-off frequencies and f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> are shown at different temperatures. As a whole, our study illustrates the stability, robustness and applicability of this graphene technology for future high performance electronics.