Qualitative Analysis & Advancement of Asymmetric Recessed Gates with Dual Floating Material GaN HEMT for Quantum Electronics

Abstract

The Impact of Aluminium nitride (AlN) Spacer, Gallium Nitride (GaN) Cap Layer, Front Pi Gate (FG) and Back Pi Gate(BG), High K dielectric material such as Hafnium dioxide(HfO2), Aluminium Oxide (Al2O3), Silicon nitride (Si3N4) on Aluminium Galium Nitride/ Gallium Nitride (AlGaN/GaN), Heterojunction High Electron Mobility Transistor (HEMT) of 6nm(nanometer) technology is simulated and extracted the results using the Silvaco Atlas TCAD tool. The importance of High K dielectric materials like Al2O3 and Si3N4 are studied for the proposal of GaN HEMT. AlN, GaN Cap Layers, and High K Dielectric material are layered one on another to overcome the conventional transistor draw backs like surface defects, scattering of the electron, and less mobility of electron. Hot electron effect is overcome by Pi type gate. Therefore, by optimizing the HEMT structure the abilities for certain devices are converted to abilities. The dependency on DC characteristics and RF characteristics due to GaN Cap Layers, Multi gate (FG &BG), and High K Dielectric material is established. Further Compared Single Gate (SG) Passivated HEMT, Double Gate (DG) Passivated HEMT, Double Gate Triple(DGT) Tooth Passivated HEMT, High K Dielectric Front Pi Gate (FG) and Back Pi Gate (BG) Nanowire HEMT. It is observed that there is an increased Drain Current (Ion) of 5.92(A/mm), low Leakage current(Ioff) 5.54E-13 (A) of Transconductance (Gm) of 3.71(S/mm), Drain Conductance (Gd) of 1.769(S/mm), Cutoff frequency(fT) of 743 GHz Maximum Oscillation frequency (Fmax) 765 GHz, Minimum Threshold Voltage (Vth) of -4.5V, On Resistance (Ron)of 0.40(Ohms) at Vgs =0V. These outstanding characteristics and transistor structure of proposed HEMT and materials involved to apply for upcoming generation High-speed GHz frequency applications.