Qualification of low cost triple junction GaInP/GaAs/Ge solar cell assemblies with external bypass diode connected by insulated cell P/diode N interconnects

Giuseppe Gabetta,Roberta Campesato,Emilio Fernandez Lisbona,Mariacristina Casale,Davide Cospito

doi:10.1109/espc.2019.8932072

Qualification of low cost triple junction GaInP/GaAs/Ge solar cell assemblies with external bypass diode connected by insulated cell P/diode N interconnects

Giuseppe Gabetta, Roberta Campesato + Show 3 more

https://doi.org/10.1109/espc.2019.8932072

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Publication Date: Sep 1, 2019

Citations: 3

Affiliation: CESI (Italy), European Space Research and Technology Centre

#Solar Cell Assemblies #Solar Cell + Show 8 more

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Abstract

CESI has combined the high efficiency, radiation hardness and reliability of the III-V compound triple junction solar cells with a low cost approach developing a peculiar triple junction solar cell targeting 28% efficiency, radiation hardness typical of this class of solar cells and at the same time a significant cost advantage. Such solar cells have recently passed the LEO and GEO qualification according to the ECSS standard at bare cell level and are currently under GEO and LEO qualification as solar cell assemblies.

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