Abstract
Large-scale Josephson junction (JJ) arrays are essential in many applications, especially quantum voltage standards application for which hundreds of thousands of junctions are required to realize a high quantum voltage. For almost all applications, high-quality JJ arrays must be realized in a small chip area. This study proposes vertically quadruple-stacked Nb/(NbxSi1 – x/Nb)4 JJs to increase the integration density of junctions in an array. The current–voltage (I–V) characteristics of a single stack of Nb/(NbxSi1 – x/Nb)4 JJs have been measured at 4.2 K. The uniformity of junctions in one stack and the uniformity of several stacks over the entire 2 inches wafer have been analyzed. By optimizing the fabrication parameters, a large-scale quadruple-stacked Nb/(NbxSi1 – x/Nb)4 array consisting of 400000 junctions is realized. Good DC I–V characteristics are obtained, indicating the good uniformity of the large-scale array.
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