Qcrit-independent model method for proton SEU analysis

Abstract

An improved model for device proton SEU cross section simulation is established totally based on heavy ion test data. The model is deduced from the assumption that an injecting heavy ion with a certain LET value will just generate a SEU cross section value corresponding to the LET value at the heavy ion test data. Based on the assumption, the model has special sub-volume collection efficiency, which makes the SEU cross section simulation result through the model independent of critical charge (Qcrit). The modeling method is verified by heavy ion and proton test data of Xilinx XC2V1000 and XC4VSX55 FPGA. The difference of proton SEU cross section between simulation result and test data is less than 69% above 40 MeV of proton.