Abstract
GaAs field-effect transistors with a Schottky-barrier gate have been investigated in the frequency range 12–20 GHz. Measurements of the maximum available gain have shown that the devices have much higher gain in this range than has been expected. A 17 GHz oscillator having an output power of 4mW and a 4-stage 14.9GHz amplifier with 16 dB of power gain have been built using stripline technique.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
