Abstract
In this paper we investigated the thermal stability of a novel CrTiN/TiN double barrier, compared to those of TiN and CrTiN single layer barriers. The CrTiN/TiN double layer was stable against heat treatments at higher than 700°C in oxygen ambient for 30 min. However, the double layer showed a severe Pt and Cr interdiffusion issue after crystallization annealing for PZT. We found that pre-annealing treatments prior to deposition of Pt significantly reduced the interdiffusion. In addition, we also demonstrated ferroelectric characteristics of PZT capacitors on top of Pt/CrTiN/TiO2/Si bottom electrode system for ultra-high density memory applications.
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