Abstract
The photochemical behavior of the visible light initiating system that consists of a sensitizing dye, 2,6-diethyl-8-phenyl-1,3,5,7-tetramethylpyrromethene BF2 complex (EPP), and a photoacid generator, N-trifluoromethylsulfonyloxy-1,8-naphthalimide (NIOTf), was studied mainly by means of absorption and fluorescence spectrometry not in solution but in a polymer matrix which is a closer medium to the one currently employed in the field of photoresists. Excited singlet electron transfer from EPP to NIOTf was considered as the main reaction pathway in this system. The EPP/NIOTf system was applied to a photoresist for printed circuit board with an appropriate binder polymer which contains an acetal protection group. A pattern profile of the photoresist was exceedingly affected by the amount of photogenerated acids, their diffusion, and amine in the atmosphere. Finally, by controlling exposure energy and the post-exposure bake (PEB) process, a photoresist with a high resolution (8 µm line and space) was obtained under argon ion laser irradiation. Copyright © 2006 John Wiley & Sons, Ltd.
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