Abstract

ABSTRACTThe emissivity effects and compensation schemes encountered in pyrometric temperature measurements in RTP systems are described in this paper. The emissivity effects include substrate roughness, layered films, substrate temperature, and chamber reflectivity. Compensation techniques are derived based on the emissivity effects, and include reference thermocouples and reflectance-based measurements. Compensated emissivity results in wafer-to-wafer temperature variations of less than ± 6 C, compared to as much as ± 100 C for uncompensated emissivity. A new model for emissivity analysis at temperatures larger than 700 C is also described.

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