Abstract
The gaseous by-products of the thermal decomposition of three organosilazanes have been analysed in an atmospheric chemical vapour deposition (CVD) reactor by coupled gas chromatography/mass spectrometry. A reaction mechanism, initiated at low temperature by the selective SiCH 3 bond homolysis, allows an explanation of the gas-phase composition and the main feature of the SiN x C y :H films deposited using these organosilazanes precursors. Correlations between the growth results and the variation of the gas-phase composition give evidence of an increase in the contribution of an homogeneous decomposition to the overall growth process with the hydrogen partial pressure. This model mechanism shows how the microstructure of materials prepared by organometallic CVD process is often influenced by the molecular structure of the precursor.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
