Abstract
A pulse surface reaction rate analysis (PSRA) was used for determining the rate constants of CH4 formation from TMGa on a GaAs surface. I observed three different rate constants at the same temperature. I hypothesized that the three rate constants are the rate constants for releasing the first, second, and third methyl groups in TMGa on the GaAs surface. The largest rate constant of the three does not satisfied the Arrhenius equation because the rate is as large as the measurement limits. However, the rate constants of the second and third large rate constants, k2 and k3, are formulated.
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