Abstract
Abstract After a short description of the structure and operation of a pyroelectric sensor, the thermal conditions of the sensing element, the thermal-to-electrical conversion and the signal processing of pyroelectric thin film sensors will be represented. By means of the complex normalised current responsivity TR(jω, s) and figures of merit Mv, M1 and MD, an universal description of the sensor's internal operation is obtained. The influence of electrothermal coupling effects on the dielectric loss of the pyroelectric thin film is also discussed. Substantial requirements to the pyroelectric thin film and the sensor design are derived. A comparison of often used thin film ferroelectrics shows that the application of P(VDF/TrFE) in low cost sensors can be advantageous although the figures of merit are lower. Copolymer film can be easily deposited onto a silicon wafer in post-processing after read out circuit fabrication, for instance by spin coating of a copolymer solution. Furthermore, the very low thermal...
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