Pyro-phototronics mediated ultraviolet visible radiation sensing in Al/ nanostructured porous silicon multilayered Schottky photovoltaic device

Abstract

Present article manifests first of its kind of pyro-phototronic effect in nano structured porous silicon multilayered (PS-ML) photovoltaic device. The device exhibits excellent photo to dark incremental value of ∼1625% aided by pyro-phototronic effect under ultraviolet (UV) irradiation. The open circuit voltage (Voc) and short circuit current density (Jsc) under 365 nm (UV), 400 nm (blue) and 548 nm (Green) are found to be ∼ −0.53V, −0.70V and −0.68V9.50, 6.02 and 5.90nAcm−2 respectively. In addition, the device exhibits distinct responsivity (Rλ) peak values ∼ 35 and 65 mAW−1 at 240 nm and 365 nm under -1V bias while ∼ 18, 42, 30 and 33 mAW−1at 240, 365, 400, 440 nm under 0V bias respectively. Further on annealing at 100 °C, Rλ value drops while Voc improves to −0.630V under UV irradiation. This observed pyro-phototronic effect due to PS multi-layer in the Schottky device will open new door to revolutionize research on porous silicon nanostructured based photodetectors and photovoltaic devices.