PVT Growth at High Temperatures

Abstract

Physical vapor transport (PVT) growth method was used to grow bulk crystals of AlN and thick epitaxial SiC films on on-axis Si-face 4H-SiC(0001) substrates from the powder source materials. Both bulk and thick film crystals were characterized by scanning electron microscopy (SEM), which showed a surface morphology did not have any observable growth defects or cracking. We observed nice hexagonal growth morphology a typical characteristic of diffusion-limited growth. River-patterns free from micro bubbles and micro voids were observed on the as grown surface. An XRD rocking curve measured the FWHM as 51.0 arc seconds and a reciprocal space map showed a singular intense region that is attributed to the high quality homoepitaxial SiC film. A similar value was observed for small AlN crystals also.