Abstract
Physical vapor transport (PVT) growth method was used to grow bulk crystals of AlN and thick epitaxial SiC films on on-axis Si-face 4H-SiC(0001) substrates from the powder source materials. Both bulk and thick film crystals were characterized by scanning electron microscopy (SEM), which showed a surface morphology did not have any observable growth defects or cracking. We observed nice hexagonal growth morphology a typical characteristic of diffusion-limited growth. River-patterns free from micro bubbles and micro voids were observed on the as grown surface. An XRD rocking curve measured the FWHM as 51.0 arc seconds and a reciprocal space map showed a singular intense region that is attributed to the high quality homoepitaxial SiC film. A similar value was observed for small AlN crystals also.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
