Abstract
This paper presents a new design of dopingless dynamically configurable double-gate tunnel FET (TFET) for process–voltage–temperature (PVT)-aware applications. The dopingless FETs have recently been explored and showed very good electrostatic control over the channel with reduced thermal budget and process complexity. The proposed device makes use of the dopingless concept, but instead of charge plasma, electrostatic doping is used for carrier concentration under the source/drain region that allows dynamic configuration. The 2-D device simulation results show that the proposed device has promising switching behavior and offers significant reduction in PVT variations on different performance metrics, such as subthreshold swing and drive current as compared with a conventional TFET.
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