Abstract
Phase change memory (PCM) has been regarded as a promising candidate of the next generation nonvolatile memory. However, the application of PCM has been limited by the high power required to reset the device (changing from crystalline to amorphous state by melting the phase change material). TiN is proposed to be bottom electrode of PCM due to its lower thermal and more suitable electrical conductivity than that of tungsten, which can drastically reduce reset power by less thermal loss and higher heating efficiency. This article shall report several TiN films with different Ti/N ratio prepared by physical vapor deposition (PVD). The Ti/N ratio, resistivity, thermal stability, anti-erosion capability in HF and film density of PVD TiN films are characterized and optimized. We demonstrate the step coverage and contact resistance of the 10nm PVD TiN as the sidewall bottom electrode.
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