Abstract
GaAs grown by liquid phase epitaxy (LPE) in a graphite boat is shown to be n - type with high purity providing the melt has first been baked in dry hydrogen for a characteristic impurity-purging time. The porous natures of the graphite boat facilitates adsorption of O 2 during loading which in turn may introduce CO into the GaAs melt. Electron mobility at 77 K is used as a measure of the total ionized impurity density. It has been experimentally found that the limiting values of total ionized impurity concentration is 2×10 14cm -3 at 700°C, with a 77 K mobility of 163,000 cm 2/V-sec, providing the baking time between successive runs is 24 hours or more. Defects, meniscus lines, and terracing were negligible.
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