Abstract
In this study, the purification of metallurgical-grade silicon using a combination of solvent refining and gas pressure filtration was investigated in the Sn–Si alloy. After the solvent refining process, the silicon was separated from the solvent by gas pressure filtration. The effects of pressure differentials (p), separation temperatures (T), and silicon contents in the alloy (ω(a)) on the separation efficiency were evaluated. The filtration result was improved with a higher pressure differential. The separation temperature had little effect on the separation efficiency, whereas a higher silicon content in the alloy led to a decrease of the separation efficiency. The final purification result after separation was examined, and a better separation contributed to the removal of impurity. The optimal result for separation was obtained at p = 0.30 MPa, T = 250 °C, and ω(a) = 20 wt%, and 93.6% of tin was separated into the filtrate, while almost all the silicon was recovered and formed the separated silicon with a silicon content of 80.0 wt%. At the same time, most impurities were eliminated and 94.9% of B was removed after refining the sample twice.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.