Pure spin current transport in a SiGe alloy

Takahiro Naito,Michihiro Yamada,Kohei Hamaya,Shinya Yamada,Kentarou Sawano,Makoto Tsukahara

doi:10.7567/apex.11.053006

Abstract

Using four-terminal nonlocal magnetoresistance measurements in lateral spin-valve devices with Si0.1Ge0.9, we study pure spin current transport in a degenerate SiGe alloy (n ∼ 5.0 × 1018 cm−3). Clear nonlocal spin-valve signals and Hanle effect curves, indicating generation, transport, and detection of pure spin currents, are observed. The spin diffusion length and spin lifetime of the Si0.1Ge0.9 layer at low temperatures are reliably estimated to be ∼0.5 µm and ∼0.2 ns, respectively. This study demonstrates the possibility of exploring physics and developing spintronic applications using SiGe alloys.

Highlights

Clear nonlocal spin-valve signals and Hanle-effect curves, indicating generation, transport, and detection of pure spin currents, are observed
Si0 1Ge0 9, we study pure spin current transport in a degenerate SiGe alloy (n ∼ 5.0 × 1018 cm−3)
This study demonstrates the possibility of exploring physics and developing spintronic applications using SiGe alloys

Summary

Pure spin current transport in a SiGe alloy

Clear nonlocal spin-valve signals and Hanle-effect curves, indicating generation, transport, and detection of pure spin currents, are observed. Recent progress of technological developments for detecting pure spin current transport at room temperature in Si [21, 23, 24] and Ge [31] by four-terminal nonlocal magnetoresistance measurements is noteworthy. By using four-terminal nonlocal magnetoresistance measurements in Si0.1Ge0.9-based lateral spin-valve (LSV) devices, we show reliable pure spin current transport in an n-type Si0.1Ge0.9 (n-SiGe) layer at low temperatures.

Pure Ge SiGe

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