Pure single-photon emission from an InGaN/GaN quantum dot

M J Holmes,F C.-P Massabuau,J Jarman,R A Oliver,T Zhu,Y Arakawa

doi:10.1063/5.0049488

M J Holmes, F C.-P Massabuau + Show 4 more

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https://doi.org/10.1063/5.0049488

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Abstract

Single-photon emitters with high degrees of purity are required for photonic-based quantum technologies. InGaN/GaN quantum dots are promising candidates for the development of single-photon emitters but have typically exhibited emission with insufficient purity. Here, pulsed single-photon emission with high purity is measured from an InGaN quantum dot. A raw g(2)(0) value of 0.043 ± 0.009 with no corrections whatsoever is achieved under quasi-resonant pulsed excitation. Such a low value is, in principle, sufficient for use in quantum key distribution systems.

Highlights

Semiconductor quantum dots (QDs) are being developed from a wide variety of materials for the realization of single-photon emitters for quantum photonic applications.[1,2] III-nitride QDs are an interesting prospect for such technologies as they can allow for the generation of single photons from the near UV to the infrared,[3,4,5] are capable of operation at high temperature[6,7,8,9], and can be developed for emission with deterministic polarization.[10]
InGaN/GaN and GaN/AlGaN QDs have been the subject of intense research interest, but several issues pertaining to emitter performance must still be overcome before realistically usable devices can be developed
While experimentally measured g(2)(0) values lower than 0.5 are sufficient to claim the presence of a single quantum emitter,[11] g(2)(0) values lower than 0.1 are required for even the most technologically forgiving application: quantum key distribution (QKD).[12]

Summary

Introduction

Semiconductor quantum dots (QDs) are being developed from a wide variety of materials for the realization of single-photon emitters for quantum photonic applications.[1,2] III-nitride QDs are an interesting prospect for such technologies as they can allow for the generation of single photons from the near UV to the infrared,[3,4,5] are capable of operation at high temperature[6,7,8,9] (or at temperatures accessible with thermoelectric cooling10), and can be developed for emission with deterministic polarization.[10].

Results

Conclusion