Abstract
By using a binuclear gallium complex, bis(salicylidene-o-aminophenolato)-bis(8quinolinoato)-bisgallium(III)[Ga2(saph)2q2], as the host material, organic light emitting diodes (OLEDs) with pure red emission were developed, which used a red fluorescent dye of 4-(dicyanomethylene)-2-t-butyle-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)4H-pyran (DCJTB). Ga2(saph)2q2 proves to be of much better film-forming ability and a smaller energy gap than tris(8-quinolinolato)aluminum (Alq3). And the doped device with a configuration of indium tin oxide/N,N′-bis-(1-naphthl)-diphenyl-1,1′-biphenyl-4,4′-diamine/Ga2(saph)2q2: DCJTB (2 wt %)/Ga2(saph)2q2/Mg:Ag, exhibited a turn-on voltage as low as 2.2 V, and a pure red emission with Commission Internationale de l’Eclairage (CIE 1931) coordinates of (0.67, 0.33). The improved energy transfer gave a high current efficiency of 2.04 cd/A at 20 mA/cm2, which is about two times higher than that of the doped Alq3 device. This letter indicates that developing host materials is a promising way to achieve excellent red emission OLEDs.
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