Abstract

MoN was prepared by rare earth Gd thermal-diffused permeation method via solid–gas interface reaction using (NH4)4[NiMo6O24H6]·7H2O (abbreviated as NiMo6) as the precursor. Thermo-gravimetric differential thermal analysis (TG–DTA) was used to study the product’s stability. The results of X-ray diffractometer (XRD) and X-ray photoelectron spectroscopy (XPS) indicate that a new hexagonal crystal MoN forms after the rare earth gas permeation and Gd3+ are diffused as substitution ions into the crystal lattice of MoN, and the surface valence of elemental content was measured by XPS. The conductivity results by direct current (DC) four-probe method show that MoN obtained from the Gd thermal permeation exhibits conductor character in the temperature range of 298–740 K and semiconductor behavior in 740–800 K.

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