Abstract
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Highlights
The need for high permitivity gate insulators for FETs continues to the backbone of the integrated industry
High dielectric constant pure and iron doped TiO2 films have been fabricated by means of an optimized sol-gel process
TEM studies revealed that particle size decreases with increase in iron concentration
Summary
The need for high permitivity gate insulators for FETs continues to the backbone of the integrated industry. As MOSFET dimensions have scaled, correspondingly larger values of the oxide capacitance have been required. This oxide capacitance is necessary to invert the surface to a sufficient sheet charge density to obtain the desired current (switching) for a given supply voltage and to avoid short channel behavior. Short channel behavior leads to I) increased output conductance in the saturation regime (channel length modulation) II) Increased leakage in the threshold regime (drain induced barrier lowering), and III) A dependence of the threshold voltage (Vt) on the channel length. Incomplete scaling of the gate oxide control make the manufacture of high density integrated circuits based on sub micron MOSFETS impractical
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