Abstract
We investigate the modification (enhancement and suppression) of the spontaneous emission rate of a dipole emitter in two configurations: inside a finite-length semiconductor nanowire surrounded by bulk metal and in the vicinity of a finite metal nanowire. Our analysis is based on a first-principle approach, which is reduced to a seminumeric one in the limit of large nanowire aspect ratios. The numerical calculations are carried out for an emitter in a GaAs nanowire embedded in Ag or Au and for that nearby an Ag or Au nanowire in vacuum or dielectric. We consider in detail the Purcell and β factors as functions of the cylinder radius, the emitter position, and the transition frequency for both configurations. We contrast the results for finite-length nanowires with those obtained in the infinite-length approximation and find considerable differences in the Purcell factor magnitude.
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