Punchthrough Enhanced Phototransistor Fabricated in Standard CMOS Process

Xin Liu Xin Liu,Yuchun Chang Yuchun Chang,Chen Zou Chen Zou,Yuqi Wang Yuqi Wang,Guotong Du Guotong Du,Shuxu Guo Shuxu Guo

doi:10.1109/led.2008.2011143

Punchthrough Enhanced Phototransistor Fabricated in Standard CMOS Process

Xin Liu Xin Liu, Yuchun Chang Yuchun Chang + Show 4 more

https://doi.org/10.1109/led.2008.2011143

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Journal: IEEE Electron Device Letters	Publication Date: Mar 1, 2009
Citations: 10

Affiliation: State Key Laboratory on Integrated Optoelectronics, Jilin University, Institute of Solid State Physics, Dalian University of Technology

#Punchthrough Transistor #Standard CMOS Process + Show 8 more

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Abstract

A simple lateral structure phototransistor, combined with a normal phototransistor and a punchthrough transistor, has been successfully designed and fabricated in standard commercial CSMC 0.5- mum CMOS process. The proposed punchthrough enhancement mechanism provides a high optical gain of close to 107 for a low-level optical power of 7.0 times10-15W at a wavelength of 650 nm. Compared with conventional punchthrough phototransistors, a lower dark current of around 1 muA is obtained at a 2.0-V operating voltage.

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