Abstract
The incident pump beam waist-dependent pulse energy generation in Nd:YAG/Cr4+:YAG composite crystal passively Q-switched microchip laser has been investigated experimentally and theoretically by moving the Nd:YAG/Cr4+:YAG composite crystal along the pump beam direction. Highest pulse energy of 0.4 mJ has been generated when the Nd:YAG/Cr4+:YAG composite crystal is moved about 6 mm away from the focused pump beam waist. Laser pulses with pulse width of 1.7 ns and peak power of over 235 kW have been achieved. The theoretically calculated effective laser beam area at different positions of Nd:YAG/Cr4+:YAG composite crystal along the pump beam direction is in good agreement with the experimental results. The highest peak power can be generated by adjusting the pump beam waist incident on the Nd:YAG/Cr4+:YAG composite crystal to optimize the effective laser beam area in passively Q-switched microchip laser.
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