Pulsed voltage breakdown of Al/CuO reactive multilayer films in metal-interlayer-metal structures

Abstract

In this study, metal-interlayer-metal (MIM) structure samples are designed to investigate the breakdown properties of aluminum/cupric oxide (Al/CuO)-based reactive multilayer films (RMFs) and to evaluate the differences in the breakdown properties between the Al/CuO RMFs and the single-layer CuO film sample. The MIM structure samples use Al/CuO RMFs as the interlayers between the top and bottom aluminum electrodes, like a sandwich. The pulsed voltage is produced by a capacitor. The samples are not discharged until the external voltage exceeds the breakdown field strength (EB) of the Al/CuO RMFs. The results show that the EB of the Al/CuO RMFs can be improved by Al interlayers in the RMFs, but the destruction area caused by breakdown is smaller than that of the single-layer CuO film. A theoretical model indicates that the thermal conductivity and vaporization heat are crucial parameters for the breakdown of Al/CuO RMFs. The viewpoint from the breakdown of the Al/CuO RMFs proposed in this study might provide a new way for interpreting the electrical excitation process in RMFs.