Abstract
In this letter, we demonstrate a unique approach for low temperature epitaxial growth of single crystal silicon films on Si(100). Pulsed supersonic jet epitaxy (PSJE), employs high kinetic energy jets of a disilane-hydrogen mixture incident on the surface leading to layer by layer growth. Precise control of film thickness and significantly higher sticking coefficients are demonstrated. Growth rate dependence of pulse frequency and its implications are discussed. We have been able to reproducibly deposit good quality single crystalline films at temperatures as low as 400 °C with this technique, without the use of any external activation.
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