Abstract
Pulsed supermagnetron plasma was applied to the deposition of hydrogenated amorphous carbon nitride (a-CNx:H) films. The range of upper/lower electrode rf powers (UPRF/LORF) was selected as 0–800/0–800 W, and films were deposited using i-C4H10/N2 plasma. Phase-controlled rf power (13.56 MHz) was modulated by a 2.5 kHz pulse frequency. The range of duty ratios for the pulsed rf power range was selected as 12.5–100%. With a decrease in duty ratio, the wafer temperature decreased as the pulsed plasma-discharge time decreased. The optical band gap decreased slightly with an increase in duty ratio. At a duty ratio of 12.5%, the optical band gap decreased significantly with an increase in LORF. The nitrogen atom concentrations of the films were less than 9%, and hard a-CNx:H films of approximately 35 GPa were obtained at a LORF of 50 W, independent of UPRF.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
