Abstract
Micro-LEDs have been attracting attention as a potential candidate for the next generation of display technology. Here we demonstrate the feasibility of large-area monolithic integration of multi-color InGaN micro-LEDs via pulsed sputtering deposition (PSD) and a standard photolithographical technique. The PSD allows for sequential epitaxial growth of blue and green InGaN LED stacks connected with the GaN based tunneling junction. The tunneling junctions serve as protective layers on p-type GaN against the dry etching damage and hole injection layers in each blue and green emission InGaN active layer. The tunneling junction-connected multi-color InGaN LED stack contributes to the high-density and large-area monolithic integration of RGB micro-LEDs using standard photolithography and the ICP-dry etching method.
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