Abstract
m-Plane GaN and InGaN films were grown on m-plane ZnO substrates at ~350 °C by pulsed sputtering deposition. It was found that the critical thickness of the m-plane GaN films grown on ZnO lies between 25 and 62 nm, whereas 180-nm-thick m-plane In0.12Ga0.88N can be coherently grown on ZnO substrates, which is explained well by theoretical calculations based on an energy-balance model. The coherently grown m-plane InGaN on ZnO exhibited narrow X-ray rocking curves compared with the m-plane GaN grown on ZnO. These results demonstrate the benefit of lattice-matched ZnO substrates for epitaxy of high-quality nonpolar InGaN films.
Highlights
Over the last decade or so, the growth, physics, and device applications of nonpolar and semipolar nitrides have made significant progress[1,2]
These results indicate the potential of pulsed sputtering deposition (PSD) for the fabrication of nitride-based devices on ZnO substrates
A sharp streaky reflection high-energy electron diffraction (RHEED) pattern corresponding to the growth of m-plane GaN was observed for the film grown at 340 °C, whereas the film grown at 540 °C exhibited a RHEED pattern with spots, indicating the growth of a mixture of zincblende and wurtzite GaN
Summary
Over the last decade or so, the growth, physics, and device applications of nonpolar and semipolar nitrides have made significant progress[1,2]. It can be expected that high-quality nonpolar nitrides could grow on ZnO substrates. This technique enables the growth of nitride films with high control over the film thickness and allows deposition over a large area.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.