Abstract
We demonstrate electrical pumping of self-assembled InP/Ga 0.51In 0.49P quantum dots embedded in a p-i-n resonant-cavity-diode structure with emission in the red spectral region. A high aluminum containing Al 0.98Ga 0.02As layer allows wet thermal oxidation and implementation of a current restricting oxide aperture above the active region. The intended use of these InP-quantum dots in such a resonant-cavity-LED structure as a pulsed electrically driven single-photon emitter was confirmed by measuring the second order intensity correlation function g ( 2 ) ( τ ) with a Hanbury–Brown and Twiss type setup. The correlation measurements performed on a single quantum dot ( ≈ 40 K ) show a clear antibunching behavior ( g ( 2 ) ( 0 ) < 0.24 ) up to 200 MHz as expected for a single-photon emitter.
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