Abstract
A two-dimensional model framework is used to study the effects associated with a redistribution of an internal electric field under the influence of a space charge induced by a nonuniform rate of separation of photo generated carriers at high energies of optical excitation of a metal — semiconductor — metal (MSM) photodiode. This results in a considerable distortion of the pulsed response of the photodiode, and in reduction of the efficiency and of the pass bandwidth of the photodiode. The conditions are found under which the influence of screening of the internal electric field on the response signal profile of the photodiode is unimportant.
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