Pulsed Plasma Assisted Cl-Doped Graphene Nano Dots with Semiconducting Property

Abstract

Herein we report the mass-production of Cl-doped graphene nanodots through the implementation of pulsed plasma on graphite rod in CHCl3 medium. The Cl-doped graphene shows the band gap, which is assigned as p-type semiconductor by kelvin probe force microscopy (KPFM) measurement. The current findings revealed not only the semiconducting nano graphene with significant Cl insertion through pulsed plasma method but also opened a facile route for mass production of elemental doped 2-D layer materials using a wide range of organic solvent.