Abstract
The growth of wurtzite ZnTe thin films with thickness between 250 and 1000 nm on borosilicate glass substrates by electron beam evaporation is reported. The formation of the wurtzite structure was confirmed using X-ray diffraction. The films showed diffraction peaks originating from the (110), (016) and (116) planes, indicating absence of any preferred orientation. The transmission of all the films was of the order of 80% in the near IR region. The refractive index of the wurtzite ZnTe phase increased with increase in thickness from 3.0 at 250 nm to 4.2 for the 1000 nm thickness film at a wavelength of 1800 nm. The optical band gap of these films increased with thickness showing values of 0.85, 0.9 and 0.98 eV at 250, 400 and 1000 nm thickness, respectively. Chemical composition studies revealed that the films were mildly non-stoichiometric with excess Te. Comparison with the zinc blende structure of ZnTe shows that the wurtzite structure has a higher refractive index, lower band gap and lower charge carrier concentration.
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