Abstract
The small-signal impedances of M–n–p and p–n–p BARITT diodes have been measured as a function of bias current and diode temperature. A bridge method, developed by Van Iperen and Tjassens, has been adapted so that measurements can be made during short current pulses. In this way, the diode temperature can be kept close to the heatsink temperature. The method is equally suited for other microwave diodes, e.g. IMPATT and Gunn diodes.
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