Abstract
Pulsed laser irradiation was used to induce silicide formation in nickel thin films deposited onto and oriented silicon substrates. Epitaxial NiSi2 silicide layers are obtained by a suitable energy density value of the 30 ns Nd glass laser pulse in the case of a 15 nm thick layer. Irradiation of thicker Ni layers formed instead silicides of nonuniform composition. The comparison of experimental results with calculations indicates that the reaction between the metal and the silicon layer starts at the interface and at a temperature well below the melting point of Ni or Si.
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