Abstract
The effects of KrF excimer laser pulses on the crystalline and optical properties of structures with four InxGa1 – xAs/GaAs quantum wells (x ranging from 0.08 to 0.25) are studied. The results obtained by Raman spectroscopy and reflection spectroscopy show that the high crystalline quality of the GaAs cap layer is retained after exposure to laser radiation with an energy density from 200 to 360 mJ/cm2. It is experimentally shown by photoluminescence spectroscopy and laser-annealing simulation, and by solving the problem of heat propagation in a one-dimensional GaAs-based system, that the thermal effects occurring in heterostructures under pulsed laser irradiation below the GaAs melting threshold lead to mechanical-stress relaxation. At the initial stages of this process, point defects appear in InxGa1 – xAs/GaAs quantum wells which lead to a “red” shift of the photoluminescence emission peaks of the quantum wells and serve as nonradiative-recombination centers, which causes photoluminescence quenching.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
