Abstract
We have examined microstructures induced by pulsed-laser-melting for the Mn ion implanted Si using transmission electron microscopy. Single crystalline Si(001) wafers were irradiated with 65keV and 120keV Mn ions to a fluence of 1.0×1016/cm2 at room temperature. The ion beam-induced amorphous layers in the as-implanted samples were melted and resolidified by pulsed YAG laser irradiation. After laser irradiation with appropriate laser fluence, the surface amorphous layers recrystallize into the single crystalline Si. The Mn concentration becomes higher in the near-surface region with increasing the number of laser shots. The migrated Mn atoms react with Si atoms and form the amorphous Mn–Si in the Si matrix.
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