Abstract
Cleaved GaAs surfaces decompose under weak pulsed-laser irradiation, leading to the formation of metallic Ga islands. The reduction of band bending nonuniformities in photoemission spectra acquired during the laser pulses, in concert with new core-level fitting techniques which treat broadened spectra, permits a detailed analysis. A decomposition rate consistent with a two-step photochemical excitation process is measured. The surface remains largely intact on an atomic scale, but is increasingly unable to support excited surface states as decomposition proceeds.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.