Abstract
Due to the ultra-wideband gap, high transmittance in the ultraviolet (UV) region, and excellent environmental stability, zinc gallium oxide (ZnGa2O4) has attracted considerable interest in deep-ultraviolet photodetectors. Here, ZnGa2O4 thin film was fabricated on different substrates by pulsed laser deposition with a post-annealing process under an oxygen atmosphere. It is found that the substrates have a great impact on the morphology, structure, and crystal quality of thin film. After annealing, the thin film quality has been improved. The metal–semiconductor–metal photodetector shows excellent reproducible characteristics and fast response performance, which demonstrates great potential in next-generation optoelectronic devices.
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