Abstract
Thin films of YBa 2Cu 3O 7− δ and NdBa 2Cu 3O 7− δ were grown by pulsed laser deposition. The statistical methods of experimental design and regression analysis were used to correlate the electrical and morphological properties of the films to the growth conditions. For optimised transition temperatures the deposition parameter settings of target–substrate distance, oxygen pressure and laser energy density were found to differ significantly for YBa 2Cu 3O 7− δ and NdBa 2Cu 3O 7− δ . While the maximum transition temperatures obtained were similar (∼90 K) for the two materials, all NdBa 2Cu 3O 7− δ films had a roughness comparable to the c-axis unit cell dimension whereas the YBa 2Cu 3O 7− δ films had a surface roughness which varied between 5–17 nm depending on the growth conditions. In addition, there were differences in the average size and density of non-stoichiometric outgrowths on the two types of film. These differences we relate to a difference in growth mode. Our atomic force microscope and scanning tunnelling microscope studies suggest a 3D screw dislocation mediated growth for YBa 2Cu 3O 7− δ and a 2D layer-by-layer process for NdBa 2Cu 3O 7− δ .
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