Abstract
Bi12(GaxBi1−x)O19.5 (x = 0.4−0.5) thin films have been deposited at 500–600°C on (100) Y-stabilized ZrO2 by excimer laser ablation of dense targets with stoichiometry Bi12(Ga0.72Bi0.28)O19.5. The crystalline films formed are preferentially oriented with the 〈130〉 direction parallel to the 〈100〉 direction of the substrate.
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