Abstract
Near-IR, 1.3 µm femtosecond (fs) laser pulses through an optical parametric amplifier were used to successfully deposit stoichiometric polymethylphenylsilane (PMPS) films by pulsed laser deposition. Compared with those for 0.79 µm fs laser pulses, the films were deposited faster. The IR absorption spectrum of the film deposited using the 1.3 µm fs laser pulses compared favorably to that of the film deposited using the 0.79 µm fs laser pulses. The deposition of dense films, accompanied by the ejection of droplets from the PMPS target, was realized using both 1.3 and 0.79 µm fs laser pulses.
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