Pulsed laser deposition of Li–N dual acceptor in p-ZnO:(Li, N) thin film and the p-ZnO:(Li, N)/n-ZnO homojunctions on Si(100)

Abstract

This article showed the p-type ZnO thin films which were co-doped with different components of Li and N by pulsed laser deposition (PLD) on Si(111) substrates. According to Hall-effect data, the Li-N co-doped ZnO:(Li, N) exhibited stable room-temperature p-type behavior. Combining the XRD, UV-vis transmittance spectrum, and Hall-effect data, the preferable preparation condition was proposed for growing high quality p-type ZnO:(Li, N) film with comparatively low resistivity of 0.09 Ω cm and relatively high carrier concentration of 2.64 × 1017 cm−3, which were obtained at 0.1 at. % lithium composition. Furthermore, compared with the photoluminescence spectrum of ZnO:(Li) with ZnO:(Li, N) thin film, the existence of Li–N dual acceptor, which activated the acceptor in ZnO:(Li, N) thin film, was confirmed. On the basis of these, the p-ZnO:(Li, N)/n-ZnO homojunctions on Si(100) substrate was realized by PLD. All these data proved that Li-N dual acceptor would be effective when activated by PLD doping and this approach was feasible to realize the physical device homojunctions on Si substrate.